| Press Releases 91 to 96 of 1696 |
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| 11.09.2024 12:30 |
Infineon nominated for “Deutscher Zukunftspreis” 2024 with innovative silicon carbide solution |
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Munich, Germany – 11 September 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has been nominated for the Deutscher Zukunftspreis 2024, the Federal President’s Award for Technology and Innovation, for its development of a new type of energy-saving chip based on the innovative semiconductor material silicon carbide (SiC). The Jury of Deutscher Zukunftspreis has announced the three nominated teams today in Munich. A team of developers from Infineon, together with Chemnitz University of Technology, has succeeded in developing the world's first silicon carbide MOSFET with a vertical channel (trench MOSFET) and innovative copper contacting in the 3300V voltage class. The new SiC modules and the power converters equipped with the modules represent a revolutionary innovation leap in semiconductor technology from conventional silicon to more energy-efficient silicon carbide, which reduces switching losses in high-current applications by 90 percent. |
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| 11.09.2024 10:00 |
Infineon pioneers world’s first 300 mm power gallium nitride (GaN) technology – an industry game-changer |
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Munich, Germany and Villach, Austria – 11 September 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced that the company has succeeded in developing the world’s first 300 mm power gallium nitride (GaN) wafer technology. Infineon is the first company in the world to master this groundbreaking technology in an existing and scalable high-volume manufacturing environment. The breakthrough will help substantially drive the market for GaN-based power semiconductors. Chip production on 300 mm wafers is technologically more advanced and significantly more efficient compared to 200 mm wafers, since the bigger wafer diameter offers 2.3 times more chips per wafer.
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| 10.09.2024 11:15 |
Infineon announces StrongIRFET™ 2 power MOSFET 30 V portfolio for mass market applications |
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Munich, Germany – 10 September 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is introduced its new StrongIRFET™ 2 power MOSFET 30 V portfolio, expanding the existing StrongIRFET 2 family to address the growing demand for 30 V solutions in the mass market segment. Optimized for high robustness and ease-of-use, the new power MOSFETs were specifically designed to meet the requirements of a wide range of mass market applications, enabling high design flexibility. Amongst these applications are industrial switched-mode power supplies (SMPS), motor drives, battery-powered applications, battery management systems, and uninterruptible power supplies (UPS). |
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| 05.09.2024 15:45 |
Roborock uses hybrid Time-of-Flight system by Infineon and pmdtechnologies for sweeping and mopping robots |
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Munich, Germany – 5 September 2024 – Roborock, a global leader in intelligent home robotics, has launched the intelligent sweeping and mopping all-in-one robot Roborock Qrevo Slim at IFA 2024 in Berlin, equipped with an innovative 3D camera module for navigation and obstacle avoidance using the REAL3™ Time-of-Flight (ToF) imager by Infineon Technologies (FSE: IFX / OTCQX: IFNNY). The technology allows to reduce size and increase reliability. Compared to the body height of traditional sweeping and mopping robots of around 100 mm, the overall height of the Roborock Qrevo Slim is only 82 mm, allowing it to pass through lower and narrower spaces while providing high reliability. |
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| 13.08.2024 11:15 |
Infineon expands its Bluetooth® portfolio with eight new parts, including the AIROC™ CYW89829 Bluetooth LE MCU for automotive applications |
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Munich, Germany – 13 August 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced the expansion of its Bluetooth® portfolio by eight new products in the AIROC™ CYW20829 Bluetooth Low Energy 5.4 microcontroller (MCU) family, featuring Systems-on-Chip (SoCs) and modules optimized for industrial, consumer, and automotive use cases. The high integration of the CYW20829 product family allows designers to reduce bill-of-material (BOM) cost and device footprint in a wide variety of applications, including PC accessories, low-energy audio, wearables, solar micro inverters, asset trackers, health and lifestyle, home automation and others. Product designers also benefit from Infineon’s rich development infrastructure and commitment to robust security, with support for secure boot and execution environments and cryptography acceleration to safeguard sensitive data. |
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| 12.08.2024 10:15 |
Infineon presents high-performance CIPOS™ Maxi Intelligent Power Modules for industrial motor drives of up to 4 kW |
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Munich, Germany – 12 August 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) expands its 7th generation TRENCHSTOP™ IGBT7 product family with the CIPOS™ Maxi Intelligent Power Module (IPM) series for low-power motor drives. The new IM12BxxxC1 series is based on the new TRENCHSTOP IGBT7 1200 V and rapid diode EmCon 7 technology. Thanks to the latest micro-pattern trench design, it offers exceptional control and performance. This results in significant loss reduction, increased efficiency, and higher power density. The portfolio includes three new products in variants ranging from 10 A to 20 A for power ratings of up to 4.0 kW: IM12B10CC1, IM12B15CC1 and IM12B20EC1. |
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