| 04.11.2024 14:15 |
Infineon launches new generation of GaN power discretes with superior efficiency and power density |
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Munich, Germany – 4 November 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced the launch of a new family of high-voltage discretes, the CoolGaN™ Transistors 650 V G5, further strengthening its Gallium Nitride (GaN) portfolio. Target applications for this new product family range from consumer and industrial switched-mode power supply (SMPS) such as USB-C adapters and chargers, lighting, TV, data center and telecom rectifiers to renewable energy and motor drives in home appliances. |
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| 31.10.2024 10:15 |
Infineon presents new ASIL-D-compliant 3-phase gate driver IC for braking systems and electric power steering in vehicles |
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Munich, Germany – 31 October 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is launching the new MOTIX™ TLE9189 gate driver IC for safety-critical applications for 12 V brushless DC (BLDC) motors. With this new three-phase gate driver IC, Infineon is responding to the growing demand for motor control ICs required for by-wire solutions. The driver IC is qualified according to AEC Q100 Grade 0 and ISO 26262 (ASIL D). This makes the device particularly suitable for brake-by-wire and steer-by-wire systems, where conventional mechanical connections will be eliminated in the future. |
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| 30.10.2024 10:00 |
Infineon introduces DEEPCRAFT™ brand for Edge AI software solutions and launches new Ready Models |
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Munich, Germany – 30 October 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is further strengthening its AI software portfolio as Edge AI comes to a growing number of consumer and industrial applications. With that in mind, the company introduces DEEPCRAFT™, a new software solution category brand for Edge AI and Machine Learning. Infineon recognizes the huge potential of Edge AI for the market, and the importance of providing customers with the tools to utilize Edge AI. |
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| 29.10.2024 10:00 |
Infineon unveils the world’s thinnest silicon power wafer, pushing technical boundaries and improving energy efficiency |
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Munich, Germany – 29 October 2024 – After announcing the world’s first 300-millimeter gallium nitride (GaN) power wafer and opening the world’s largest 200-millimeter silicon carbide (SiC) power fab in Kulim, Malaysia, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has unveiled the next milestone in semiconductor manufacturing technology. Infineon has reached a breakthrough in handling and processing the thinnest silicon power wafers ever manufactured, with a thickness of only 20 micrometers and a diameter of 300 millimeters, in a high-scale semiconductor fab. The ultra-thin silicon wafers are only a quarter as thick as a human hair and half as thick as current state-of-the-art wafers of 40-60 micrometers. |
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| 28.10.2024 10:00 |
Infineon at electronica 2024: Solutions for decarbonization and digitalization |
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Munich, Germany – 28 October 2024 – At the upcoming electronica trade show in Munich, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) will illustrate how its innovative solutions are driving the global trends of decarbonization and digitalization. The company will show how its semiconductors are paving the way to a net-zero economy and to unlocking the full potential of artificial intelligence (AI). From 12 to 15 November at booth 502 in hall C3, Infineon will present highlights from its extensive portfolio and offer the opportunity to talk to its experts. |
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| 23.10.2024 10:15 |
CoolSiC™ Schottky diode 2000 V enables higher efficiency and design simplification in DC link systems up to 1500 VDC |
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Munich, Germany – 23 October 2024 – Many industrial applications today are transitioning to higher power levels with minimized power losses, which can be achieved through increased DC link voltage. Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) addresses this challenge by introducing the CoolSiC™ Schottky diode 2000 V G5, the first discrete silicon carbide diode on the market with a breakdown voltage of 2000 V. The product family is suitable for applications with DC link voltages up to 1500 VDC and offers current ratings from 10 to 80 A. This makes it ideal for higher DC link voltage applications such as in solar and EV charging applications. |
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